Using Solmates PLD equipment, Robert Bosch recently demonstrated that sufficiently high e31,f values can be obtained for PZT deposition temperatures as low as 445⁰C. The thermal budget used is low enough for deposition of PZT thin films on complementary metal-oxide-semiconductor (CMOS) wafers for MEMS actuator applications. Application specific integrated circuit (ASIC) chips are typically used for controlling the MEMS die. Integration of MEMS and ASIC on one chip will reduce the footprint, hence the overall cost of functional MEMS devices.
More details about this work is published in issue 636 of Thin Solid Films.